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inchange semiconductor product specification 1 silicon pnp power transistors 2SA1909 description ? ? with to-3pml package ? complement to type 2sc5101 applications ? audio and general purpose pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -140 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -6 v i c collector current -10 a i b base current -4 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SA1909 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; i b =0 -140 v v cesat collector-emitter saturation voltage i c =-5 a;i b =-0.5 a -0.5 v i cbo collector cut-off current v cb =-140v; i e =0 -10 | a i ebo emitter cut-off current v eb =-6v; i c =0 -10 | a h fe dc current gain i c =-3a ; v ce =-4v 50 180 f t transition frequency i c =-0.5a ; v ce =-12v 20 mhz c ob output capacitance i e =0; v cb =-10v;f=1mhz 400 pf switching times t on turn-on time 0.17 | s t s storage time 1.86 | s t f fall time i c =-5a;r l =12 |? i b1 =-i b2 =-0.5a;v cc =-60v 0.27 | s ? h fe classifications o p y 50-100 70-140 90-180
inchange semiconductor product specification 3 silicon pnp power transistors 2SA1909 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon pnp power transistors 2SA1909

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